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SI4214DY-T1-GE3

SI4214DY-T1-GE3 Vishay / Siliconix


si4214dy-260403.pdf Hersteller: Vishay / Siliconix
MOSFET 30V 8.5A 3.1W 23.5mohm @ 10V
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Technische Details SI4214DY-T1-GE3 Vishay / Siliconix

Description: MOSFET 2N-CH 30V 8.5A 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8.5A, Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 15V, Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete.

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SI4214DY-T1-GE3 SI4214DY-T1-GE3 Hersteller : Vishay si4214dy.pdf Trans MOSFET N-CH 30V 6.8A 8-Pin SOIC N T/R
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SI4214DY-T1-GE3 SI4214DY-T1-GE3 Hersteller : Vishay Siliconix si4214dy.pdf Description: MOSFET 2N-CH 30V 8.5A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 15V
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
SI4214DY-T1-GE3 SI4214DY-T1-GE3 Hersteller : Vishay Siliconix si4214dy.pdf Description: MOSFET 2N-CH 30V 8.5A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 15V
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar