SI4346DY-T1-E3
SI4346DYT1E3
Hersteller:
Informationen zu Lagerverfügbarkeit und Lieferzeiten
25000 Stücke
25000 Stücke
Technische Details SI4346DYT1E3
Description: MOSFET N-CH 30V 5.9A 8SO, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.31W (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Part Status: Obsolete.
Preis SI4346DYT1E3 ab 0 EUR bis 0 EUR
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SI4346DY-T1-E3 Hersteller: VISHAY 09+ 
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158 Stücke |
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SI4346DYT1E3 Hersteller: VISHAY |
25000 Stücke |
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SI4346DY-T1-E3 Hersteller: VISHAY
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50000 Stücke |
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SI4346DY-T1-E3 Hersteller:
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2080 Stücke |
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 Hersteller: Vishay / Siliconix MOSFET 30V 8.0A 2.5W 23mohm @ 10V
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auf Bestellung 2760 Stücke  Lieferzeit 14-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 5.9A 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.31W Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 23 mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide
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auf Bestellung 5759 Stücke Lieferzeit 21-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 5.9A 8SO Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V Power Dissipation (Max): 1.31W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 5.9A 8SO Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.31W (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Obsolete
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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