SI4346DY-T1-GE3

SI4346DY-T1-GE3

SI4346DY-T1-GE3

Hersteller: Vishay / Siliconix
MOSFET 30V 8.0A 2.5W 23mohm @ 10V
si4346dy-241165.pdf
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Technische Details SI4346DY-T1-GE3

Description: MOSFET N-CH 30V 5.9A 8SO, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Part Status: Obsolete, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.31W (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), FET Type: N-Channel.

Preis SI4346DY-T1-GE3 ab 0 EUR bis 0 EUR

SI4346DY-T1-GE3
SI4346DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.9A 8SO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.31W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
FET Type: N-Channel
si4346dy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen