SI4386DY-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 30V 11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 1.47W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
auf Bestellung 3140 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 3.22 EUR |
| 10+ | 2.64 EUR |
| 100+ | 2.05 EUR |
| 500+ | 1.74 EUR |
| 1000+ | 1.42 EUR |
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Technische Details SI4386DY-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V, Power Dissipation (Max): 1.47W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V.
Weitere Produktangebote SI4386DY-T1-E3 nach Preis ab 1.68 EUR bis 3.43 EUR
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SI4386DY-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET 30V 16A 3.1W 7.0mohm @ 10V |
auf Bestellung 2932 Stücke: Lieferzeit 14-28 Tag (e) |
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| SI4386DY-T1-E3 | Hersteller : VISHAY |
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auf Bestellung 32500 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI4386DYT1E3 | Hersteller : VISHAY |
auf Bestellung 32500 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI4386DY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 16A; Idm: 50A; 3.1W Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 16A On-state resistance: 9.5mΩ Type of transistor: N-MOSFET Power dissipation: 3.1W Polarisation: unipolar Gate charge: 18nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Case: SO8 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SI4386DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 11A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V Power Dissipation (Max): 1.47W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V |
Produkt ist nicht verfügbar |
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| SI4386DY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 16A; Idm: 50A; 3.1W Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 16A On-state resistance: 9.5mΩ Type of transistor: N-MOSFET Power dissipation: 3.1W Polarisation: unipolar Gate charge: 18nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Case: SO8 |
Produkt ist nicht verfügbar |