SI4403BDY-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 20V 7.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.9A, 4.5V
Power Dissipation (Max): 1.35W (Ta)
Vgs(th) (Max) @ Id: 1V @ 350µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
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Technische Details SI4403BDY-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 7.3A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), Rds On (Max) @ Id, Vgs: 17mOhm @ 9.9A, 4.5V, Power Dissipation (Max): 1.35W (Ta), Vgs(th) (Max) @ Id: 1V @ 350µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V.
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SI4403BDY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 7.3A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9.9A, 4.5V Power Dissipation (Max): 1.35W (Ta) Vgs(th) (Max) @ Id: 1V @ 350µA Supplier Device Package: 8-SOIC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V |
Produkt ist nicht verfügbar |