SI4409DY-T1-E3

SI4409DY-T1-E3

Hersteller: VISHAY

si4409dy.pdf
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Technische Details SI4409DY-T1-E3

Description: MOSFET P-CH 150V 1.3A 8-SOIC, Packaging: Tape & Reel (TR), Part Status: Obsolete, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 150V, Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 332pF @ 50V, Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: 8-SO, Package / Case: 8-SOIC (0.154", 3.90mm Width).

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SI4409DYT1E3
Hersteller:

32500 Stücke
SI4409DYT1E3
Hersteller: VISHAY

32500 Stücke
SI4409DY-T1-E3
Hersteller:

si4409dy.pdf
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SI4409DY-T1-E3
SI4409DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 1.3A 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 332pF @ 50V
Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
si4409dy.pdf
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