Technische Details SI4411DYT1E3 VISHAY
Description: MOSFET P-CH 30V 9A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V.
Weitere Produktangebote SI4411DYT1E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SI4411DY-T1-E3 | Hersteller : VISHAY |
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auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4411DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 9A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4411DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 9A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V |
Produkt ist nicht verfügbar |