Si4430BDY-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 30V 14A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
auf Bestellung 2436 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 4.26 EUR |
| 10+ | 3.55 EUR |
| 100+ | 2.82 EUR |
| 500+ | 2.39 EUR |
| 1000+ | 2.03 EUR |
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Technische Details Si4430BDY-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 30V 14A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V.
Weitere Produktangebote Si4430BDY-T1-E3 nach Preis ab 2.27 EUR bis 4.32 EUR
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Si4430BDY-T1-E3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 2365 Stücke: Lieferzeit 14-28 Tag (e) |
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| Si4430BDY-T1-E3 | Hersteller : VISHAY |
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auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI4430BDYT1E3 | Hersteller : VISHAY |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| Si4430BDY-T1-E3 | Hersteller : VISHAY |
09+ |
auf Bestellung 1218 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4430BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH Si 30V 14A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4430BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH Si 30V 14A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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| Si4430BDY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 60A; 3W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Pulsed drain current: 60A Power dissipation: 3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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Si4430BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 14A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V |
Produkt ist nicht verfügbar |
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| Si4430BDY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 60A; 3W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Pulsed drain current: 60A Power dissipation: 3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |