auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.62 EUR |
| 5000+ | 0.55 EUR |
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Technische Details SI4431BDY-T1-E3 Vishay
Description: MOSFET P-CH 30V 5.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V.
Weitere Produktangebote SI4431BDY-T1-E3 nach Preis ab 0.55 EUR bis 2.35 EUR
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SI4431BDY-T1-E3 | Hersteller : Vishay |
 Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4431BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 5.7A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V |
auf Bestellung 35000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4431BDY-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.7A; Idm: -30A; 0.9W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.7A Pulsed drain current: -30A Power dissipation: 0.9W Case: SO8 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1462 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4431BDY-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.7A; Idm: -30A; 0.9W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.7A Pulsed drain current: -30A Power dissipation: 0.9W Case: SO8 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1462 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4431BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 5.7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V |
auf Bestellung 39139 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4431BDY-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET 30V (D-S) 7.5A |
auf Bestellung 16109 Stücke: Lieferzeit 14-28 Tag (e) |
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SI4431BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI4431BDYT1E3 | Hersteller : VISHAY |
auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) |
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Si4431BDY-T1-E3 Produktcode: 127262 |
Transistoren > Transistoren P-Kanal-Feld |
Produkt ist nicht verfügbar
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SI4431BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |