SI4434ADY-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 250V 2.8A/4.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.9W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 125 V
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 2.13 EUR |
| 5000+ | 2.05 EUR |
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Technische Details SI4434ADY-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 250V 2.8A/4.1A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 4.1A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V, Power Dissipation (Max): 2.9W (Ta), 6W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 125 V.
Weitere Produktangebote SI4434ADY-T1-GE3 nach Preis ab 2.15 EUR bis 4.76 EUR
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SI4434ADY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 250V 2.8A/4.1A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 4.1A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V Power Dissipation (Max): 2.9W (Ta), 6W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 125 V |
auf Bestellung 9584 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4434ADY-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 250V Vds 20V Vgs SO-8 |
auf Bestellung 4360 Stücke: Lieferzeit 14-28 Tag (e) |
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SI4434ADY-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI4434ADY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 250 V, 4.1 A, 0.125 ohm, SOIC, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 250 Dauer-Drainstrom Id: 4.1 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 6 Bauform - Transistor: SOIC Anzahl der Pins: 8 Produktpalette: ThunderFET Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.125 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 4 SVHC: No SVHC (19-Jan-2021) |
auf Bestellung 4110 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4434ADY-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI4434ADY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 250 V, 4.1 A, 0.125 ohm, SOIC, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 250 Dauer-Drainstrom Id: 4.1 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 6 Bauform - Transistor: SOIC Anzahl der Pins: 8 Produktpalette: ThunderFET Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.125 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 4 SVHC: No SVHC (19-Jan-2021) |
auf Bestellung 4110 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4434ADY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 250V 2.8A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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| SI4434ADY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 250V 2.8A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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| SI4434ADY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 4.1A; Idm: 25A; 6W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 4.1A Pulsed drain current: 25A Power dissipation: 6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 16.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| SI4434ADY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 4.1A; Idm: 25A; 6W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 4.1A Pulsed drain current: 25A Power dissipation: 6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 16.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |