SI4434DY-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 250V 2.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 3.12 EUR |
| 5000+ | 3 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4434DY-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 250V 2.1A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), Rds On (Max) @ Id, Vgs: 155mOhm @ 3A, 10V, Power Dissipation (Max): 1.56W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V.
Weitere Produktangebote SI4434DY-T1-GE3 nach Preis ab 3.28 EUR bis 6.92 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SI4434DY-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 250V Vds 20V Vgs SO-8 |
auf Bestellung 6499 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
|
|
SI4434DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 250V 2.1A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 3A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V |
auf Bestellung 17002 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
SI4434DY-T1-GE3 | Hersteller : Vishay |
SI4434DY-T1-GE3 Vishay MOSFETs Transistor N-CH 250V 2.1A 8-Pin SOIC N T/R - Arrow.com |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
SI4434DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 250V 2.1A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| SI4434DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 3A; Idm: 30A; 3.1W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 3A Pulsed drain current: 30A Power dissipation: 3.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 162mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| SI4434DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 3A; Idm: 30A; 3.1W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 3A Pulsed drain current: 30A Power dissipation: 3.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 162mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |