SI4442DY-T1-GE3 VISHAY
Hersteller: VISHAYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 22A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
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Technische Details SI4442DY-T1-GE3 VISHAY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 22A; Idm: 60A; 3.5W, Type of transistor: N-MOSFET, Technology: TrenchFET®, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 22A, Pulsed drain current: 60A, Power dissipation: 3.5W, Case: SO8, Gate-source voltage: ±12V, On-state resistance: 7.5mΩ, Mounting: SMD, Gate charge: 50nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 2500 Stücke.
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| SI4442DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 22A; Idm: 60A; 3.5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Pulsed drain current: 60A Power dissipation: 3.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |