SI4446DY-T1-E3

SI4446DY-T1-E3

Hersteller: VISHAY

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Technische Details SI4446DY-T1-E3

Description: MOSFET N-CH 40V 3.9A 8-SOIC, Package / Case: 8-SOIC (0.154", 3.90mm Width), Supplier Device Package: 8-SO, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 1.1W (Ta), Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V, Vgs (Max): ±12V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V, Vgs(th) (Max) @ Id: 1.6V @ 250µA, Rds On (Max) @ Id, Vgs: 40mOhm @ 5.2A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), Drain to Source Voltage (Vdss): 40V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Obsolete, Packaging: Tape & Reel (TR).

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SI4446DY-T1-E3
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SI4446DYT1E3
Hersteller: VISHAY

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SI4446DYT1E3
Hersteller:

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SI4446DY-T1-E3
Hersteller: Vishay
Trans MOSFET N-CH 40V 3.9A 8-Pin SOIC N T/R
73661.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4446DY-T1-E3
SI4446DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 3.9A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
73661.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4446DY-T1-E3
SI4446DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 3.9A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
73661.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen