Technische Details SI4462DYT1E3 VISHAY
Description: MOSFET N-CH 200V 1.15A 8-SOIC, Packaging: Cut Tape (CT), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta), Rds On (Max) @ Id, Vgs: 480mOhm @ 1.5A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOIC, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V.
Weitere Produktangebote SI4462DYT1E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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| SI4462DY-T1-E3 |
auf Bestellung 94000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4462DY-T1-E3 | Hersteller : Vishay |
 Trans MOSFET N-CH 200V 1.15A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4462DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 1.15A 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta) Rds On (Max) @ Id, Vgs: 480mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V |
Produkt ist nicht verfügbar |