auf Bestellung 2123 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 92+ | 1.72 EUR |
| 100+ | 1.53 EUR |
| 101+ | 1.46 EUR |
| 109+ | 1.3 EUR |
| 250+ | 1.22 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 1 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4465ADY-T1-GE3 Vishay
Description: MOSFET P-CH 8V 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 20A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 4.5V, Power Dissipation (Max): 3W (Ta), 6.5W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V.
Weitere Produktangebote SI4465ADY-T1-GE3 nach Preis ab 1 EUR bis 4.52 EUR
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SI4465ADY-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 8V 13.7A 8-Pin SOIC N T/R |
auf Bestellung 2123 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4465ADY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 8V 13.7A 8-Pin SOIC N T/R |
auf Bestellung 4192 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4465ADY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 8V 13.7A 8-Pin SOIC N T/R |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4465ADY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 8V 13.7A 8-Pin SOIC N T/R |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4465ADY-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 8.0V 13.7A 3.0W 9.0mohm @ 4.5V |
auf Bestellung 9561 Stücke: Lieferzeit 14-28 Tag (e) |
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SI4465ADY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 8V 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 4.5V Power Dissipation (Max): 3W (Ta), 6.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V |
auf Bestellung 2121 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4465ADY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 8V 13.7A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4465ADY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 8V 13.7A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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| SI4465ADY-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -13.7A; Idm: -40A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -8V Drain current: -13.7A Pulsed drain current: -40A Power dissipation: 3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 16mΩ Mounting: SMD Gate charge: 85nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SI4465ADY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 8V 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 4.5V Power Dissipation (Max): 3W (Ta), 6.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V |
Produkt ist nicht verfügbar |
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| SI4465ADY-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -13.7A; Idm: -40A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -8V Drain current: -13.7A Pulsed drain current: -40A Power dissipation: 3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 16mΩ Mounting: SMD Gate charge: 85nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |