Technische Details SI4466DY-T1-E3 FAI
Description: MOSFET N-CH 20V 9.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), Rds On (Max) @ Id, Vgs: 9mOhm @ 13.5A, 4.5V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V.
Weitere Produktangebote SI4466DY-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| SI4466DYT1E3 | Hersteller : VISHAY |
auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI4466DY-T1-E3 | Hersteller : VISHAY | 09+ |
auf Bestellung 291 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI4466DY-T1-E3 | Hersteller : VISHAY | SO-8 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI4466DY-T1-E3 | Hersteller : VISHAY | SOP8 09+ |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4466DY-T1-E3 | Hersteller : Vishay |
 Trans MOSFET N-CH 20V 9.5A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4466DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 9.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 13.5A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V |
Produkt ist nicht verfügbar |
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SI4466DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 9.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 13.5A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V |
Produkt ist nicht verfügbar |