Technische Details SI4542DY-T1-E3 VISHAY
Description: MOSFET N/P-CH 30V 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SOIC, Part Status: Obsolete.
Weitere Produktangebote SI4542DY-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| SI4542DYT1E3 | Hersteller : VISHAY |
auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI4542DY-T1-E3 | Hersteller : VISHAY |
 09+ |
auf Bestellung 2518 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI4542DY-T1-E3 | Hersteller : VISHAY |
SO-8 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4542DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N/P-CH 30V 6.9A/6.1A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4542DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 30V 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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SI4542DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 30V 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |