SI4620DY-T1-E3

SI4620DY-T1-E3

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Technische Details SI4620DY-T1-E3

Description: MOSFET N-CH 30V 6A 8-SOIC, FET Type: MOSFET N-Channel, Metal Oxide, Supplier Device Package: 8-SO, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 3.1W, Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7.5A (Tc), Drain to Source Voltage (Vdss): 30V, FET Feature: Schottky Diode (Isolated).

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SI4620DY-T1-E3
Hersteller: VISHAY
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SI4620DYT1E3
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SI4620DY-T1-E3
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SI4620DY-T1-E3
SI4620DY-T1-E3
Hersteller: Vishay / Siliconix
MOSFET 30V 7.4A 3.1W 35mohm @ 10V
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SI4620DY-T1-E3
SI4620DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6A 8-SOIC
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7.5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Schottky Diode (Isolated)
si4620dy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4620DY-T1-E3
SI4620DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6A 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7.5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET N-Channel, Metal Oxide
si4620dy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4620DY-T1-E3
SI4620DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7.5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
si4620dy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen