SI4628DY-T1-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2508 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 2508 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SI4628DY-T1-GE3
Description: MOSFET N-CH 30V 38A 8SOIC, FET Type: N-Channel, Part Status: Obsolete, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc), Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Package / Case: 8-SOIC (0.154", 3.90mm Width), Supplier Device Package: 8-SO, Mounting Type: Surface Mount, Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 15V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide).
Preis SI4628DY-T1-GE3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 38A 8SOIC FET Type: N-Channel Part Status: Obsolete Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) 
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auf Bestellung 63 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 38A 8SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 38A 8SOIC Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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auf Bestellung 63 Stücke Lieferzeit 21-28 Tag (e) |
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