SI4628DY-T1-GE3

SI4628DY-T1-GE3

Hersteller: Vishay / Siliconix
MOSFET 30V Vds 20V Vgs SO-8
si4628dy-244403.pdf
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auf Bestellung 2508 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SI4628DY-T1-GE3

Description: MOSFET N-CH 30V 38A 8SOIC, FET Type: N-Channel, Part Status: Obsolete, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc), Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Package / Case: 8-SOIC (0.154", 3.90mm Width), Supplier Device Package: 8-SO, Mounting Type: Surface Mount, Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 15V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide).

Preis SI4628DY-T1-GE3 ab 0 EUR bis 0 EUR

SI4628DY-T1-GE3
SI4628DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 38A 8SOIC
FET Type: N-Channel
Part Status: Obsolete
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
si4628dy.pdf
auf Bestellung 63 Stücke
Lieferzeit 21-28 Tag (e)
SI4628DY-T1-GE3
SI4628DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 38A 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
si4628dy.pdf
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SI4628DY-T1-GE3
SI4628DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 38A 8SOIC
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
si4628dy.pdf
auf Bestellung 63 Stücke
Lieferzeit 21-28 Tag (e)