SI4686DY-T1-E3 VISHAY
Hersteller: VISHAYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14.5A; 3.3W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.5A
Power dissipation: 3.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1261 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 62+ | 1.16 EUR |
| 102+ | 0.71 EUR |
| 117+ | 0.61 EUR |
| 136+ | 0.53 EUR |
| 143+ | 0.5 EUR |
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Technische Details SI4686DY-T1-E3 VISHAY
Description: MOSFET N-CH 30V 18.2A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.2A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V, Power Dissipation (Max): 3W (Ta), 5.2W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V.
Weitere Produktangebote SI4686DY-T1-E3 nach Preis ab 0.5 EUR bis 3.25 EUR
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SI4686DY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 14.5A; 3.3W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 14.5A Power dissipation: 3.3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 9.2nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1261 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4686DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 18.2A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.2A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V Power Dissipation (Max): 3W (Ta), 5.2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4686DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 18.2A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.2A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V Power Dissipation (Max): 3W (Ta), 5.2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V |
auf Bestellung 7188 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4686DY-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V |
auf Bestellung 4900 Stücke: Lieferzeit 14-28 Tag (e) |
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| SI4686DYT1E3 | Hersteller : VISHAY |
auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4686DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 18.2A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4686DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 18.2A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |