SI4804CDY-T1-GE3 Vishay Semiconductors
auf Bestellung 8725 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 37+ | 1.43 EUR |
| 41+ | 1.28 EUR |
| 100+ | 0.97 EUR |
| 500+ | 0.87 EUR |
| 5000+ | 0.86 EUR |
| 10000+ | 0.82 EUR |
| 25000+ | 0.81 EUR |
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Technische Details SI4804CDY-T1-GE3 Vishay Semiconductors
Description: MOSFET 2N-CH 30V 8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V, Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote SI4804CDY-T1-GE3 nach Preis ab 0.87 EUR bis 1.72 EUR
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SI4804CDY-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET 2N-CH 30V 8A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 767 Stücke: Lieferzeit 21-28 Tag (e) |
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auf Bestellung 40000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4804CDY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 7.1A 8-Pin SOIC N T/R |
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SI4804CDY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 7.1A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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| SI4804CDY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 30A Polarisation: unipolar Kind of package: reel; tape Case: SO8 Gate charge: 23nC Technology: TrenchFET® Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±20V Pulsed drain current: 30A Type of transistor: N-MOSFET x2 Power dissipation: 3.1W On-state resistance: 27mΩ Drain current: 8A Drain-source voltage: 30V Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SI4804CDY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
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| SI4804CDY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 30A Polarisation: unipolar Kind of package: reel; tape Case: SO8 Gate charge: 23nC Technology: TrenchFET® Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±20V Pulsed drain current: 30A Type of transistor: N-MOSFET x2 Power dissipation: 3.1W On-state resistance: 27mΩ Drain current: 8A Drain-source voltage: 30V |
Produkt ist nicht verfügbar |