Produkte > VISHAY SILICONIX > SI4816DY-T1-GE3
SI4816DY-T1-GE3

SI4816DY-T1-GE3 Vishay Siliconix


71121.pdf Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.3A/7.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W, 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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Technische Details SI4816DY-T1-GE3 Vishay Siliconix

Description: MOSFET 2N-CH 30V 5.3A/7.7A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, 1.25W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A, Rds On (Max) @ Id, Vgs: 22mOhm @ 6.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete.