SI4833ADY-T1-GE3

SI4833ADY-T1-GE3

SI4833ADY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.6A 8SO
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.93W (Ta), 2.75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4833

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Technische Details SI4833ADY-T1-GE3

Description: MOSFET P-CH 30V 4.6A 8SO, Packaging: Tape & Reel (TR), Part Status: Obsolete, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.93W (Ta), 2.75W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: 8-SO, Package / Case: 8-SOIC (0.154", 3.90mm Width), Base Part Number: SI4833.

Preis SI4833ADY-T1-GE3 ab 0 EUR bis 0 EUR