auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.68 EUR |
| 5000+ | 0.62 EUR |
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Technische Details SI4835DDY-T1-E3 Vishay
Description: MOSFET P-CH 30V 13A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V, Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V.
Weitere Produktangebote SI4835DDY-T1-E3 nach Preis ab 0.61 EUR bis 2.86 EUR
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SI4835DDY-T1-E3 | Hersteller : Vishay |
 Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4835DDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 13A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4835DDY-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7.7A; 5.6W; SO8 Polarisation: unipolar Kind of package: reel; tape Case: SO8 Gate charge: 65nC Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±25V Type of transistor: P-MOSFET Power dissipation: 5.6W On-state resistance: 30mΩ Drain current: -7.7A Drain-source voltage: -30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4097 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4835DDY-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7.7A; 5.6W; SO8 Polarisation: unipolar Kind of package: reel; tape Case: SO8 Gate charge: 65nC Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±25V Type of transistor: P-MOSFET Power dissipation: 5.6W On-state resistance: 30mΩ Drain current: -7.7A Drain-source voltage: -30V |
auf Bestellung 4097 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4835DDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 13A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V |
auf Bestellung 5384 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4835DDY-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET -30V Vds 25V Vgs SO-8 |
auf Bestellung 8172 Stücke: Lieferzeit 14-28 Tag (e) |
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SI4835DDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI4835DDY-T1-E3 | Hersteller : Siliconix |
P-MOSFET 13A 30V 5,6W SI4835DDY SMD TSI4835ddy Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI4835DDYT1E3 | Hersteller : VISHAY |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4835DDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |