SI4842BDY-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 30V 28A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 15 V
auf Bestellung 2491 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 5.72 EUR |
| 10+ | 4.75 EUR |
| 100+ | 3.78 EUR |
| 500+ | 3.2 EUR |
| 1000+ | 2.72 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4842BDY-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 30V 28A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V, Power Dissipation (Max): 3W (Ta), 6.25W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 15 V.
Weitere Produktangebote SI4842BDY-T1-E3 nach Preis ab 2.55 EUR bis 5.75 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SI4842BDY-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET 30V 23A 3.5W |
auf Bestellung 7575 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
| SI4842BDY-T1-E3 |
|
auf Bestellung 945 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||||
| SI4842BDYT1E3 | Hersteller : VISHAY |
auf Bestellung 37500 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||||
 |
SI4842BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 28A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
SI4842BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 28A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
SI4842BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 28A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| SI4842BDY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 28A; Idm: 60A; SO8 Polarisation: unipolar Kind of package: reel; tape Case: SO8 Gate charge: 0.1µC Technology: TrenchFET® Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±20V Pulsed drain current: 60A Type of transistor: N-MOSFET Power dissipation: 6.25W On-state resistance: 5.7mΩ Drain current: 28A Drain-source voltage: 30V Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
|
|
SI4842BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 28A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 15 V |
Produkt ist nicht verfügbar |
|||||||||||||||||
| SI4842BDY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 28A; Idm: 60A; SO8 Polarisation: unipolar Kind of package: reel; tape Case: SO8 Gate charge: 0.1µC Technology: TrenchFET® Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±20V Pulsed drain current: 60A Type of transistor: N-MOSFET Power dissipation: 6.25W On-state resistance: 5.7mΩ Drain current: 28A Drain-source voltage: 30V |
Produkt ist nicht verfügbar |