SI4850BDY-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 60V 8.4A/11.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.94 EUR |
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Technische Details SI4850BDY-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 60V 8.4A/11.3A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 11.3A (Tc), Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V, Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V.
Weitere Produktangebote SI4850BDY-T1-GE3 nach Preis ab 0.47 EUR bis 2.26 EUR
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SI4850BDY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 8.4A 8-Pin SOIC N T/R |
auf Bestellung 4750 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4850BDY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 8.4A 8-Pin SOIC N T/R |
auf Bestellung 4750 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4850BDY-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 60V Vds 20V Vgs SO-8 |
auf Bestellung 5754 Stücke: Lieferzeit 14-28 Tag (e) |
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SI4850BDY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 8.4A/11.3A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 11.3A (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V |
auf Bestellung 3610 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4850BDY-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI4850BDY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 11.3 A, 0.016 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 11.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 4.5W Anzahl der Pins: 8Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.016ohm |
auf Bestellung 17937 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4850BDY-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI4850BDY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 11.3 A, 0.016 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 11.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 4.5W Anzahl der Pins: 8Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.016ohm |
auf Bestellung 17937 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4850BDY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 8.4A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4850BDY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 8.4A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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| SI4850BDY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 11.3A; Idm: 40A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 11.3A Pulsed drain current: 40A Power dissipation: 4.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| SI4850BDY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 11.3A; Idm: 40A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 11.3A Pulsed drain current: 40A Power dissipation: 4.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |