Technische Details SI4862DYT1E3 VISHAY
Description: MOSFET N-CH 16V 17A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 4.5V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 600mV @ 250µA (Min), Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 16 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V.
Weitere Produktangebote SI4862DYT1E3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SI4862DY-T1-E3 | Hersteller : VISHAY | SO-8 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4862DY-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 16V 17A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4862DY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 25A; Idm: 60A; 3.5W Power dissipation: 3.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 70nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 60A Mounting: SMD Case: SO8 Drain-source voltage: 16V Drain current: 25A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SI4862DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 16V 17A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 16 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V |
Produkt ist nicht verfügbar |
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SI4862DY-T1-E3 | Hersteller : Vishay Semiconductors | MOSFET 16 Volt 25 Amp 3.5W |
Produkt ist nicht verfügbar |
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SI4862DY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 25A; Idm: 60A; 3.5W Power dissipation: 3.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 70nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 60A Mounting: SMD Case: SO8 Drain-source voltage: 16V Drain current: 25A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |