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SI4862DYT1E3 VISHAY


Hersteller: VISHAY

auf Bestellung 45000 Stücke:

Lieferzeit 21-28 Tag (e)
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Technische Details SI4862DYT1E3 VISHAY

Description: MOSFET N-CH 16V 17A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 4.5V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 600mV @ 250µA (Min), Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 16 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V.

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SI4862DY-T1-E3 Hersteller : VISHAY si4862dy.pdf SO-8
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
SI4862DY-T1-E3 SI4862DY-T1-E3 Hersteller : Vishay 71439.pdf Trans MOSFET N-CH 16V 17A 8-Pin SOIC N T/R
Produkt ist nicht verfügbar
SI4862DY-T1-E3 Hersteller : VISHAY si4862dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 25A; Idm: 60A; 3.5W
Power dissipation: 3.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 70nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
Drain-source voltage: 16V
Drain current: 25A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4862DY-T1-E3 SI4862DY-T1-E3 Hersteller : Vishay Siliconix si4862dy.pdf Description: MOSFET N-CH 16V 17A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 16 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Produkt ist nicht verfügbar
SI4862DY-T1-E3 SI4862DY-T1-E3 Hersteller : Vishay Semiconductors si4862dy.pdf MOSFET 16 Volt 25 Amp 3.5W
Produkt ist nicht verfügbar
SI4862DY-T1-E3 Hersteller : VISHAY si4862dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 25A; Idm: 60A; 3.5W
Power dissipation: 3.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 70nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
Drain-source voltage: 16V
Drain current: 25A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar