SI4866BDY-T1-E3

SI4866BDYT1E3

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Technische Details SI4866BDYT1E3

Description: MOSFET N-CH 12V 21.5A 8-SOIC, Supplier Device Package: 8-SO, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 4.45W, Input Capacitance (Ciss) (Max) @ Vds: 5020pF @ 6V, Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 12A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 21.5A (Tc), Drain to Source Voltage (Vdss): 12V, FET Type: MOSFET N-Channel, Metal Oxide.

Preis SI4866BDYT1E3 ab 0 EUR bis 0 EUR

SI4866BDYT1E3
Hersteller: VISHAY

32500 Stücke
SI4866BDY-T1-E3
Hersteller: Vishay / Siliconix
MOSFET 12V Vds 8V Vgs SO-8
si4866bd-240980.pdf
auf Bestellung 4368 Stücke
Lieferzeit 14-28 Tag (e)
SI4866BDY-T1-E3
SI4866BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 21.5A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.45W
Input Capacitance (Ciss) (Max) @ Vds: 5020pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 12A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 21.5A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
si4866bd.pdf
auf Bestellung 2480 Stücke
Lieferzeit 21-28 Tag (e)
SI4866BDY-T1-E3
SI4866BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 21.5A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 21.5A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.45W
Input Capacitance (Ciss) (Max) @ Vds: 5020pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 12A, 4.5V
si4866bd.pdf
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SI4866BDY-T1-E3
SI4866BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 21.5A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.45W
Input Capacitance (Ciss) (Max) @ Vds: 5020pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 12A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 21.5A (Tc)
si4866bd.pdf
auf Bestellung 2480 Stücke
Lieferzeit 21-28 Tag (e)