SI4866BDY-T1-E3
SI4866BDYT1E3
Hersteller:
verfügbar/auf Bestellung
32500 Stücke
32500 Stücke
Technische Details SI4866BDYT1E3
Description: MOSFET N-CH 12V 21.5A 8-SOIC, Supplier Device Package: 8-SO, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 4.45W, Input Capacitance (Ciss) (Max) @ Vds: 5020pF @ 6V, Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 12A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 21.5A (Tc), Drain to Source Voltage (Vdss): 12V, FET Type: MOSFET N-Channel, Metal Oxide.
Preis SI4866BDYT1E3 ab 0 EUR bis 0 EUR
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SI4866BDYT1E3 Hersteller: VISHAY |
32500 Stücke |
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SI4866BDY-T1-E3 Hersteller: Vishay / Siliconix MOSFET 12V Vds 8V Vgs SO-8 
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auf Bestellung 4368 Stücke  Lieferzeit 14-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 12V 21.5A 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 4.45W Input Capacitance (Ciss) (Max) @ Vds: 5020pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 12A, 4.5V Current - Continuous Drain (Id) @ 25°C: 21.5A (Tc) Drain to Source Voltage (Vdss): 12V FET Type: MOSFET N-Channel, Metal Oxide
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auf Bestellung 2480 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 12V 21.5A 8-SOIC Current - Continuous Drain (Id) @ 25°C: 21.5A (Tc) Drain to Source Voltage (Vdss): 12V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 4.45W Input Capacitance (Ciss) (Max) @ Vds: 5020pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 12A, 4.5V
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 12V 21.5A 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 4.45W Input Capacitance (Ciss) (Max) @ Vds: 5020pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V Drain to Source Voltage (Vdss): 12V FET Type: MOSFET N-Channel, Metal Oxide Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 12A, 4.5V Current - Continuous Drain (Id) @ 25°C: 21.5A (Tc)
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auf Bestellung 2480 Stücke Lieferzeit 21-28 Tag (e) |
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