SI4866DY-T1-GE3

SI4866DY-T1-GE3

SI4866DY-T1-GE3

Hersteller: Vishay Semiconductors
MOSFET 12V 17A 3.0W 5.5mohm @ 4.5V
si4866dy-1765622.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1107 Stücke
Lieferzeit 14-28 Tag (e)
9+ 5.98 EUR
10+ 5.38 EUR
25+ 5.1 EUR
100+ 4.34 EUR

Technische Details SI4866DY-T1-GE3

Description: MOSFET N-CH 12V 11A 8-SOIC, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 1.6W, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V, Vgs(th) (Max) @ Id: 600mV @ 250µA (Min), Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 17A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Drain to Source Voltage (Vdss): 12V, FET Type: MOSFET N-Channel, Metal Oxide, Supplier Device Package: 8-SO.

Preis SI4866DY-T1-GE3 ab 4.34 EUR bis 5.98 EUR

SI4866DY-T1-GE3
SI4866DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 11A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.6W
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 17A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
si4866dy.pdf
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