SI4890DY-T1-E3

SI4890DYT1E3

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Technische Details SI4890DYT1E3

Description: MOSFET N-CH 30V 11A 8-SOIC, Manufacturer: Vishay Siliconix, Packaging: Cut Tape (CT), Part Status: Discontinued at Digi-Key, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V, Vgs(th) (Max) @ Id: 800mV @ 250µA (Min), Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V, Vgs (Max): ±25V, Power Dissipation (Max): 2.5W (Ta), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: 8-SOIC, Package / Case: 8-SOIC (0.154", 3.90mm Width), Base Part Number: SI4890.

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SI4890DY-T1-E3
SI4890DY-T1-E3
Hersteller: Vishay
Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R
si4890dy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4890DY-T1-E3
Hersteller: VISHAY
09+
si4890dy.pdf 70855.pdf
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SI4890DY-T1-E3
Hersteller: VISHAY
SO-8
si4890dy.pdf 70855.pdf
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SI4890DY-T1-E3
Hersteller:

si4890dy.pdf 70855.pdf
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SI4890DYT1E3
Hersteller: VISHAY

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SI4890DY-T1-E3
SI4890DY-T1-E3
Hersteller: Vishay Semiconductors
MOSFET 30V 11A 2.5W
si4890dy-1765734.pdf
auf Bestellung 2493 Stücke
Lieferzeit 14-28 Tag (e)
SI4890DY-T1-E3
SI4890DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8-SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Vgs (Max): ±25V
Power Dissipation (Max): 2.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4890
si4890dy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4890DY-T1-E3
SI4890DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8-SOIC
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Vgs (Max): ±25V
Power Dissipation (Max): 2.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4890
si4890dy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4890DY-T1-E3
SI4890DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8-SOIC
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.5W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Drain to Source Voltage (Vdss): 30V
70855.pdf
auf Bestellung 11338 Stücke
Lieferzeit 21-28 Tag (e)