SI4894BDY-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 30V 8.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.8 EUR |
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Technische Details SI4894BDY-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 30V 8.9A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 15 V.
Weitere Produktangebote SI4894BDY-T1-E3 nach Preis ab 0.83 EUR bis 2.53 EUR
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SI4894BDY-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs 30V 12V 1.4W |
auf Bestellung 3666 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4894BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 8.9A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 15 V |
auf Bestellung 11198 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4894BDYT1E3 | Hersteller : VISHAY |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4894BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4894BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4894BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4894BDY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 9.5A; Idm: 40A Polarisation: unipolar Drain current: 9.5A Drain-source voltage: 30V Power dissipation: 2.5W Case: SO8 Kind of package: reel; tape Gate charge: 38nC Technology: TrenchFET® Kind of channel: enhancement Mounting: SMD Gate-source voltage: ±20V Pulsed drain current: 40A On-state resistance: 16mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SI4894BDY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 9.5A; Idm: 40A Polarisation: unipolar Drain current: 9.5A Drain-source voltage: 30V Power dissipation: 2.5W Case: SO8 Kind of package: reel; tape Gate charge: 38nC Technology: TrenchFET® Kind of channel: enhancement Mounting: SMD Gate-source voltage: ±20V Pulsed drain current: 40A On-state resistance: 16mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |