SI4896DY-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 80V 6.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
auf Bestellung 450 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 5.07 EUR |
| 10+ | 4.55 EUR |
| 100+ | 3.66 EUR |
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Technische Details SI4896DY-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 80V 6.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V, Power Dissipation (Max): 1.56W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA (Min), Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V.
Weitere Produktangebote SI4896DY-T1-GE3 nach Preis ab 2.6 EUR bis 5.2 EUR
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SI4896DY-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 80V Vds 20V Vgs SO-8 |
auf Bestellung 3650 Stücke: Lieferzeit 14-28 Tag (e) |
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SI4896DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 80V 6.7A 8-Pin SOIC N T/R |
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SI4896DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 80V 6.7A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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| SI4896DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 9.5A; Idm: 50A Polarisation: unipolar Kind of package: reel; tape Case: SO8 Gate charge: 41nC Technology: TrenchFET® Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±20V Pulsed drain current: 50A Type of transistor: N-MOSFET Power dissipation: 3.1W On-state resistance: 22mΩ Drain current: 9.5A Drain-source voltage: 80V Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SI4896DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 80V 6.7A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V |
Produkt ist nicht verfügbar |
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| SI4896DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 9.5A; Idm: 50A Polarisation: unipolar Kind of package: reel; tape Case: SO8 Gate charge: 41nC Technology: TrenchFET® Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±20V Pulsed drain current: 50A Type of transistor: N-MOSFET Power dissipation: 3.1W On-state resistance: 22mΩ Drain current: 9.5A Drain-source voltage: 80V |
Produkt ist nicht verfügbar |