Produkte > VISHAY > SI4908DY-T1-GE3
SI4908DY-T1-GE3

SI4908DY-T1-GE3 Vishay


73698.pdf Hersteller: Vishay
Trans MOSFET N-CH 40V 5A 8-Pin SOIC N T/R
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details SI4908DY-T1-GE3 Vishay

Description: MOSFET 2N-CH 40V 5A 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.75W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 5A, Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 20V, Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete.

Weitere Produktangebote SI4908DY-T1-GE3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SI4908DY-T1-GE3 SI4908DY-T1-GE3 Hersteller : Vishay Siliconix 73698.pdf Description: MOSFET 2N-CH 40V 5A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.75W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 20V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar