Technische Details SI4916DY-T1-E3 VISHAY
Description: MOSFET 2N-CH 30V 10A/10.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.3W, 3.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A, Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete.
Weitere Produktangebote SI4916DY-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SI4916DYT1E3 | Hersteller : VISHAY |
auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4916DY-T1-E3 | Hersteller : Vishay |
 Trans MOSFET N-CH 30V 7.5A/7.8A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4916DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 10A/10.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.3W, 3.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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SI4916DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 10A/10.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.3W, 3.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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SI4916DY-T1-E3 | Hersteller : Vishay / Siliconix |
MOSFET RECOMMENDED ALT 781-SI4816BDY-T1-GE3 |
Produkt ist nicht verfügbar |