auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.96 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4925BDY-T1-E3 Vishay
Description: MOSFET 2P-CH 30V 5.3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.3A, Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote SI4925BDY-T1-E3 nach Preis ab 0.97 EUR bis 3.82 EUR
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SI4925BDY-T1-E3 | Hersteller : Vishay |
 Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC N T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4925BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 30V 5.3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 3144 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4925BDY-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET 30 Volt 7.1 Amp 2.0W |
auf Bestellung 21073 Stücke: Lieferzeit 14-28 Tag (e) |
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SI4925BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 30V 5.3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 1750 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4925BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC N T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI4925BDYT1E3 | Hersteller : VISHAY |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4925BDY-T1-E3 Produktcode: 173526 |
Transistoren > Transistoren P-Kanal-Feld |
Produkt ist nicht verfügbar
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SI4925BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4925BDY-T1-E3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.7A; 2W; SO8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Case: SO8 Drain-source voltage: -30V Drain current: -5.7A On-state resistance: 41mΩ Type of transistor: P-MOSFET x2 Power dissipation: 2W Polarisation: unipolar Gate charge: 50nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI4925BDY-T1-E3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.7A; 2W; SO8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Case: SO8 Drain-source voltage: -30V Drain current: -5.7A On-state resistance: 41mΩ Type of transistor: P-MOSFET x2 Power dissipation: 2W Polarisation: unipolar Gate charge: 50nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |