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| Anzahl | Preis ohne MwSt |
|---|---|
| 36+ | 1.47 EUR |
| 41+ | 1.29 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.63 EUR |
| 2500+ | 0.57 EUR |
| 5000+ | 0.53 EUR |
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Technische Details SI4936CDY-T1-E3 Vishay Semiconductors
Description: MOSFET 2N-CH 30V 5.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.3W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.8A, Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote SI4936CDY-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI4936CDY-T1-E3 | Hersteller : Vishay Siliconix |
 Description: MOSFET 2N-CH 30V 5.8A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
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