SI4943CDY-T1-E3 Vishay Semiconductors
auf Bestellung 2214 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 3.98 EUR |
| 16+ | 3.3 EUR |
| 100+ | 2.63 EUR |
| 250+ | 2.49 EUR |
| 500+ | 2.19 EUR |
| 1000+ | 1.92 EUR |
| 5000+ | 1.91 EUR |
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Technische Details SI4943CDY-T1-E3 Vishay Semiconductors
Description: MOSFET 2P-CH 20V 8A 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V, Rds On (Max) @ Id, Vgs: 19.2mOhm @ 8.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote SI4943CDY-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI4943CDY-T1-E3 | Hersteller : Vishay |
 Trans MOSFET P-CH 20V 8A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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| SI4943CDY-T1-E3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8A; Idm: -30A Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Pulsed drain current: -30A Case: SO8 Drain-source voltage: -20V Drain current: -8A On-state resistance: 33mΩ Type of transistor: P-MOSFET x2 Power dissipation: 3.1W Polarisation: unipolar Gate charge: 62nC Technology: TrenchFET® Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
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SI4943CDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 20V 8A 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V Rds On (Max) @ Id, Vgs: 19.2mOhm @ 8.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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SI4943CDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 20V 8A 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V Rds On (Max) @ Id, Vgs: 19.2mOhm @ 8.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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| SI4943CDY-T1-E3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8A; Idm: -30A Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Pulsed drain current: -30A Case: SO8 Drain-source voltage: -20V Drain current: -8A On-state resistance: 33mΩ Type of transistor: P-MOSFET x2 Power dissipation: 3.1W Polarisation: unipolar Gate charge: 62nC Technology: TrenchFET® Kind of channel: enhanced |
Produkt ist nicht verfügbar |