Produkte > VISHAY > SI4947ADY-T1-E3

SI4947ADY-T1-E3 VISHAY


71101.pdf Hersteller: VISHAY
SO-8
auf Bestellung 30000 Stücke:

Lieferzeit 21-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben

Technische Details SI4947ADY-T1-E3 VISHAY

Description: MOSFET 2P-CH 30V 3A 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3A, Rds On (Max) @ Id, Vgs: 80mOhm @ 3.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SOIC, Part Status: Obsolete.

Weitere Produktangebote SI4947ADY-T1-E3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SI4947ADYT1E3 Hersteller : VISHAY
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
SI4947ADY-T1-E3 SI4947ADY-T1-E3 Hersteller : Vishay 71101.pdf Trans MOSFET P-CH Si 30V 3.9A 8-Pin SOIC N T/R
Produkt ist nicht verfügbar
SI4947ADY-T1-E3 SI4947ADY-T1-E3 Hersteller : Vishay Siliconix 71101.pdf Description: MOSFET 2P-CH 30V 3A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
SI4947ADY-T1-E3 SI4947ADY-T1-E3 Hersteller : Vishay Siliconix 71101.pdf Description: MOSFET 2P-CH 30V 3A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar