SI4952DY-T1-GE3 Vishay Siliconix

Description: MOSFET 2N-CH 25V 8A 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.8W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V, Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-SOIC.