SI5403DC-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 30V 6A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1340 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.99 EUR |
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Technische Details SI5403DC-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 6A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 7.2A, 10V, Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 1206-8 ChipFET™, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1340 pF @ 15 V.
Weitere Produktangebote SI5403DC-T1-GE3 nach Preis ab 1 EUR bis 2.47 EUR
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SI5403DC-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 6A 1206-8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 7.2A, 10V Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 1206-8 ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1340 pF @ 15 V |
auf Bestellung 5763 Stücke: Lieferzeit 21-28 Tag (e) |
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SI5403DC-T1-GE3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 42935 Stücke: Lieferzeit 14-28 Tag (e) |
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SI5403DC-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 6A 8-Pin Chip FET T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI5403DC-T1-GE3 | Hersteller : Vishay Siliconix |
(1206-8,P-ch,Mosfet,30B,6A) |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI5403DC-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -20A; 3.3W; ChipFET Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -6A Pulsed drain current: -20A Power dissipation: 3.3W Case: ChipFET Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI5403DC-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -20A; 3.3W; ChipFET Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -6A Pulsed drain current: -20A Power dissipation: 3.3W Case: ChipFET Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |