SI5424DC-T1-GE3

SI5424DC-T1-GE3

SI5424DC-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6A 1206-8
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)

si5424dc.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 392 Stücke
Lieferzeit 21-28 Tag (e)

13+ 2.13 EUR
14+ 1.87 EUR
100+ 1.43 EUR

Technische Details SI5424DC-T1-GE3

Description: MOSFET N-CH 30V 6A 1206-8, Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V, Vgs (Max): ±25V, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Rds On (Max) @ Id, Vgs: 24mOhm @ 4.8A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Package / Case: 8-SMD, Flat Lead, Supplier Device Package: 1206-8 ChipFET™, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 2.5W (Ta), 6.25W (Tc), Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $).

Preis SI5424DC-T1-GE3 ab 1.43 EUR bis 2.13 EUR

SI5424DC-T1-GE3
Hersteller: Vishay / Siliconix
MOSFET 30V Vds 25V Vgs 1206-8 ChipFET
si5424dc-279812.pdf
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Lieferzeit 14-28 Tag (e)
SI5424DC-T1-GE3
SI5424DC-T1-GE3
Hersteller: Vishay Semiconductors
Thick Film Resistors - SMD 1/4watt 80.6Kohms 1%
dcrcwe3-1762152.pdf
auf Bestellung 643 Stücke
Lieferzeit 14-28 Tag (e)
SI5424DC-T1-GE3
SI5424DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6A 1206-8
Rds On (Max) @ Id, Vgs: 24mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 6.25W (Tc)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
si5424dc.pdf
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SI5424DC-T1-GE3
SI5424DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6A 1206-8
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 4.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6.25W (Tc)
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
si5424dc.pdf
auf Bestellung 2913 Stücke
Lieferzeit 21-28 Tag (e)