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SI5424DC-T1-GE3

SI5424DC-T1-GE3 Vishay Siliconix

si5424dc.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 4.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.51 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SI5424DC-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 30V 6A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 4.8A, 10V, Power Dissipation (Max): 2.5W (Ta), 6.25W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 1206-8 ChipFET™, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V.

Weitere Produktangebote SI5424DC-T1-GE3 nach Preis ab 0.55 EUR bis 1.51 EUR

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SI5424DC-T1-GE3 SI5424DC-T1-GE3 Hersteller : Vishay Siliconix si5424dc.pdf Description: MOSFET N-CH 30V 6A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 4.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
auf Bestellung 4181 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
16+1.17 EUR
100+0.81 EUR
500+0.67 EUR
1000+0.57 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
SI5424DC-T1-GE3 SI5424DC-T1-GE3 Hersteller : Vishay Semiconductors si5424dc.pdf MOSFET 30V Vds 25V Vgs 1206-8 ChipFET
auf Bestellung 2125 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.51 EUR
10+1.34 EUR
100+0.91 EUR
500+0.76 EUR
1000+0.65 EUR
3000+0.59 EUR
6000+0.55 EUR
Mindestbestellmenge: 2
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SI5424DC-T1-GE3 SI5424DC-T1-GE3 Hersteller : Vishay si5424dc.pdf Trans MOSFET N-CH 30V 6A 8-Pin Chip FET T/R
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SI5424DC-T1-GE3 Hersteller : VISHAY si5424dc.pdf SI5424DC-T1-GE3 SMD N channel transistors
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