SI5424DC-T1-GE3
SI5424DC-T1-GE3
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 30V 6A 1206-8
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 392 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 392 Stücke
Lieferzeit 21-28 Tag (e)
Technische Details SI5424DC-T1-GE3
Description: MOSFET N-CH 30V 6A 1206-8, Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V, Vgs (Max): ±25V, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Rds On (Max) @ Id, Vgs: 24mOhm @ 4.8A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Package / Case: 8-SMD, Flat Lead, Supplier Device Package: 1206-8 ChipFET™, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 2.5W (Ta), 6.25W (Tc), Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $).
Preis SI5424DC-T1-GE3 ab 1.43 EUR bis 2.13 EUR
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SI5424DC-T1-GE3 Hersteller: Vishay / Siliconix MOSFET 30V Vds 25V Vgs 1206-8 ChipFET
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auf Bestellung 2801 Stücke Lieferzeit 14-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 6A 1206-8 Rds On (Max) @ Id, Vgs: 24mOhm @ 4.8A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 1206-8 ChipFET™ Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 6.25W (Tc) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Tape & Reel (TR)
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 6A 1206-8 Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V Vgs (Max): ±25V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Rds On (Max) @ Id, Vgs: 24mOhm @ 4.8A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET™ Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 6.25W (Tc) Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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auf Bestellung 2913 Stücke Lieferzeit 21-28 Tag (e) |
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