SI5475BDC-T1-GE3
SI5475BDC-T1-GE3
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 12V 6A 1206-8
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.3W
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Technische Details SI5475BDC-T1-GE3
Description: MOSFET P-CH 12V 6A 1206-8, Drain to Source Voltage (Vdss): 12V, FET Type: MOSFET P-Channel, Metal Oxide, Supplier Device Package: 1206-8 ChipFET™, Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 6.3W, Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, Gate Charge (Qg) (Max) @ Vgs: 40nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.6A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta).