SI5504BDC-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N/P-CH 30V 4A/3.7A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.12W, 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.96 EUR |
| 6000+ | 0.91 EUR |
| 9000+ | 0.87 EUR |
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Technische Details SI5504BDC-T1-GE3 Vishay Siliconix
Description: MOSFET N/P-CH 30V 4A/3.7A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.12W, 3.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A, Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V, Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 1206-8 ChipFET™, Part Status: Active.
Weitere Produktangebote SI5504BDC-T1-GE3 nach Preis ab 1.02 EUR bis 2.35 EUR
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SI5504BDC-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 30V 4A/3.7A 1206-8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.12W, 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 1206-8 ChipFET™ Part Status: Active |
auf Bestellung 35676 Stücke: Lieferzeit 21-28 Tag (e) |
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SI5504BDC-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET RECOMMENDED ALT SI5513CDC-T1-GE3 |
auf Bestellung 45822 Stücke: Lieferzeit 14-28 Tag (e) |
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SI5504BDC-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N/P-CH 30V 3.7A/2.5A 8-Pin Chip FET T/R |
Produkt ist nicht verfügbar |
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| SI5504BDC-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4/-3.7A Mounting: SMD On-state resistance: 235/100mΩ Kind of package: reel; tape Technology: TrenchFET® Drain-source voltage: 30/-30V Drain current: 4/-3.7A Type of transistor: N/P-MOSFET Power dissipation: 3.1/3.12W Polarisation: unipolar Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI5504BDC-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4/-3.7A Mounting: SMD On-state resistance: 235/100mΩ Kind of package: reel; tape Technology: TrenchFET® Drain-source voltage: 30/-30V Drain current: 4/-3.7A Type of transistor: N/P-MOSFET Power dissipation: 3.1/3.12W Polarisation: unipolar Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |