SI5504DC-T1-GE3 Vishay Siliconix

Description: MOSFET N/P-CH 30V 2.9A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A, Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 1206-8 ChipFET™, Part Status: Obsolete.