SI5509DC-T1-E3 Vishay

Description: MOSFET N/P-CH 20V 6.1A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4.5W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6.1A, 4.8A, Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V, Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 1206-8 ChipFET™.