SI5513CDC-T1-E3

SI5513CDC-T1-E3

SI5513CDC-T1-E3

Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4A 1206-8
Part Status: Active
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)

si5513cd.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
3000+ 0.59 EUR

Technische Details SI5513CDC-T1-E3

Description: MOSFET N/P-CH 20V 4A 1206-8, Base Part Number: SI5513, Supplier Device Package: 1206-8 ChipFET™, Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 3.1W, Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V, Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A, Drain to Source Voltage (Vdss): 20V, FET Feature: Logic Level Gate, FET Type: N and P-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $).

Preis SI5513CDC-T1-E3 ab 0.59 EUR bis 1.66 EUR

SI5513CDC-T1-E3
SI5513CDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4A 1206-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Part Status: Active
Supplier Device Package: 1206-8 ChipFET™
Packaging: Cut Tape (CT)
si5513cd.pdf
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
16+ 1.66 EUR
19+ 1.42 EUR
100+ 1.06 EUR
500+ 0.83 EUR
1000+ 0.64 EUR
SI5513CDC-T1-E3
Hersteller:

si5513cd.pdf
3000 Stücke
SI5513CDC-T1-E3
SI5513CDC-T1-E3
Hersteller: Vishay
Trans MOSFET N/P-CH 20V 4A/2.4A 8-Pin Chip FET T/R
si5513cd.pdf
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SI5513CDC-T1-E3
SI5513CDC-T1-E3
Hersteller: Vishay Semiconductors
MOSFET 20V Vds 12V Vgs 1206-8 ChipFET
si5513cd.pdf
auf Bestellung 5598 Stücke
Lieferzeit 14-28 Tag (e)
SI5513CDC-T1-E3
SI5513CDC-T1-E3
Hersteller: Vishay / Siliconix
MOSFET 20V Vds 12V Vgs 1206-8 ChipFET
si5513cd-240947.pdf
auf Bestellung 5850 Stücke
Lieferzeit 14-28 Tag (e)
SI5513CDC-T1-E3
SI5513CDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4A 1206-8
Base Part Number: SI5513
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
si5513cd.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)