SI5853DDC-T1-E3

SI5853DDC-T1-E3

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si5853dd.pdf
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Technische Details SI5853DDC-T1-E3

Description: MOSFET P-CH 20V 4A 1206-8, Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.9A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Drain to Source Voltage (Vdss): 20V, FET Feature: Schottky Diode (Isolated), FET Type: MOSFET P-Channel, Metal Oxide, Supplier Device Package: 1206-8 ChipFET™, Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 3.1W.

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SI5853DDC-T1-E3
Hersteller: VISHAY
SOT-163
si5853dd.pdf
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SI5853DDC-T1-E3
SI5853DDC-T1-E3
Hersteller: Vishay
Trans MOSFET P-CH 20V 4A 8-Pin Chip FET T/R
si5853dd.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5853DDC-T1-E3
SI5853DDC-T1-E3
Hersteller: Vishay / Siliconix
MOSFET 20V 4.0A 3.1W 105mohm @ 4.5V
si5853dd-279999.pdf
auf Bestellung 3598 Stücke
Lieferzeit 14-28 Tag (e)
SI5853DDC-T1-E3
SI5853DDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4A 1206-8
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
si5853dd.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5853DDC-T1-E3
SI5853DDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4A 1206-8
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
si5853dd.pdf
auf Bestellung 257 Stücke
Lieferzeit 21-28 Tag (e)
SI5853DDC-T1-E3
SI5853DDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4A 1206-8
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
si5853dd.pdf
auf Bestellung 257 Stücke
Lieferzeit 21-28 Tag (e)