Technische Details SI5855DC-T1-E3 ST
Description: MOSFET P-CH 20V 2.7A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 2.7A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 1206-8 ChipFET™, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4.5 V.
Weitere Produktangebote SI5855DC-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SI5855DC-T1-E3 | Hersteller : VISHAY |
auf Bestellung 885 Stücke: Lieferzeit 21-28 Tag (e) |
|||
| SI5855DC-T1-E3 | Hersteller : VISHAY | 0745NO |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
||
| SI5855DC-T1-E3 | Hersteller : VISHAY | 09+ |
auf Bestellung 3018 Stücke: Lieferzeit 21-28 Tag (e) |
||
 |
SI5855DC-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 2.7A 1206-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.7A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 1206-8 ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4.5 V |
Produkt ist nicht verfügbar |