SI5902BDC-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 30V 4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.12W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.26 EUR |
| 6000+ | 1.2 EUR |
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Technische Details SI5902BDC-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 4A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.12W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V, Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 1206-8 ChipFET™.
Weitere Produktangebote SI5902BDC-T1-GE3 nach Preis ab 0.6 EUR bis 3.07 EUR
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SI5902BDC-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R |
auf Bestellung 2028 Stücke: Lieferzeit 14-21 Tag (e) |
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SI5902BDC-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R |
auf Bestellung 2028 Stücke: Lieferzeit 14-21 Tag (e) |
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SI5902BDC-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 4A 1206-8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.12W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 1206-8 ChipFET™ |
auf Bestellung 10880 Stücke: Lieferzeit 21-28 Tag (e) |
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SI5902BDC-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 30V Vds 20V Vgs 1206-8 ChipFET |
auf Bestellung 20005 Stücke: Lieferzeit 14-28 Tag (e) |
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SI5902BDC-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R |
Produkt ist nicht verfügbar |
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SI5902BDC-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R |
Produkt ist nicht verfügbar |
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| SI5902BDC-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4A; Idm: 10A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 10A Power dissipation: 3.12W Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI5902BDC-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4A; Idm: 10A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 10A Power dissipation: 3.12W Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |