SI5920DC-T1-E3 VISHAY

Description: MOSFET 2N-CH 8V 4A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.12W, Drain to Source Voltage (Vdss): 8V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 4V, Rds On (Max) @ Id, Vgs: 32mOhm @ 6.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 1206-8 ChipFET™.